Memory giant Micron has announced the launch of 16Gb DDR5 memory using 1β process node technology. Micron 1β DDR5 DRAM has built-in system capabilities up to 7,200mt /s and is currently shipped to all data center and PC customers. Micron 1β DDR5 memory uses an advanced high dielectric constant CMOS process, four-phase pulse and pulse synchronization, which improves performance by 50% and reduces power consumption per watt by 33% compared to the previous generation.

Micron pointed out that the number of CPU cores required to handle data center workloads continues to increase, and the demand for Memory bandwidth and capacity to break through the "Memory Wall" bottleneck while providing customers with optimal total cost of ownership has also increased significantly. Micron 1β DDR5 DRAM expands computing power and supports data centers and client platforms with higher performance, supporting AI training and inference, generative AI, data analysis, memory databases, and more. The new 1β DDR5 DRAM products offer rates from 4800MT/s to 7200MT/s in existing modular densities for data center and client applications.

Brian Callaway, corporate vice president of Micron's Core Computing DRAM Product Design Engineering group, said, "Mass production of 1β DDR5 DRAM and its availability to customers and data center platforms is a milestone in the industry, and our collaboration with our ecosystem partners and customers will accelerate the adoption of high-performance memory products."

Micron 1β technology helps provide a wider range of memory solutions, These include DDR5 RDIMMs and MCRDIMMs using 16Gb / 24Gb / 32Gb DRAM grains, LPDDR5X using 16Gb / 24Gb DRAM grains, HBM3E and GDDR7. The new Micron 16Gb DDR5 memory products are available through direct sales and channel partners.